(Invited) Mo-gate MOS Metallization System

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT’s reliability

(1) ISOM and Dep. Ing. Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Spain. (2) Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Germany. (3) QinetiQ, Malvern Technology Centre, Malvern, Worcestershire, WR14 3PS, United Kingdom. (4) Dep. Electrón. Escuela Politécnica. Universidad de Alcalá, 28805 Alcalá de Henares, Madrid, Spain. (5) III-V La...

Floating-gate Mos Synapse Transistors

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Gate Tunnel Current in an MOS Transistor

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.